Wafer  Size 200
Manufactured: 2002
System Mainframe
200mm or 300mm
Laser Hours 45837 Self Contained Environment
Temperature Control
Vibration Isolation
Field configurable for international power
ESD resistant up to 8KV discharge
X-Y Stage
.25 um [m] +3S accuracy over 35mm x 35mm field
Continuous and real time accuracy calibration
Air bearing X-Ystage
Wafer Chuck flatness <1.0um over 75mm x 75mm
Wide field of travel accommodates up to 300mm wafers
On-the-Fly link blow capability
Vacuum wafer hold down for 200mm or 200mm wafers
Laser Subsystem
Q-switched diode-pumped Vanadate Laser
1.34 microns (infared) wavelength - Laser diode optical pumping source
Long life and low power consumption
Air cooled
Programmable (Gaussian) Spot Size Capability
Fully Programmable spot size range
Wafer Handling
Two SEMI E15.1 Load Ports for 13 or 25 wafer 300mm FOUPS
Dual-yaw 3-link, fixed position robot
Integral prealigner
Interchangeable Load Ports
Deionizer
ESI Vision Subsystem
Automatic wafer alignment using pattern recognition
Automatic recovery routines
Realtime optimization of operating parameters
OCR-2 front side alpha numeric character recognition
System control Computer Subsystem
Hewlett Packard VME series color workstation
64MB main memory 256KB high performance cache memory
4 GB SCSI-2 fixed disk drive
2GB DDS (DAT) SCSI-2 tape drive
CD Rom Drive
17" color monitor
AUI ThickLAN interface connector
HP-UX

 

IR (Process Laser)
Laser type: Q-switched solid state laser
Class IV
Beam Power For CW Mode >= 500 milliwatts (>600 miliwatts)
Wavelength 1.3 Microns
Beam diameter at the exit aperture of the laser head 0.48 millimeters
Beam divergence 3.7 milliradians (full angle)
Operation mode : Pulsed or CW
Repetition rate: 0 to 10 kHz (Maximum is 10 kHz)
Pulse width 10 nanoseconds (standard); 7.5 nanoseconds or 15 nanoseconds for some configurations
Pulse energy <=50 micorojoules
Beam diameter - ranges from 1.7 millimeters to 9.5 millimeters into objective lens
Objective lens focal length - 9.5 millimeters

Interferometer Laser
Laser Type: Helium Neon laser, two frequency, continuous wave, visible radiation (red)
Class: II
Wavelength: 633 nanometers
Beam diameter: 6 millimeters
Max Power Output: 1 milliwatt
Frequency Difference: 20 MHz +/- 1600 Hz

Robot (Wafer Sensor) Laser
Laser type: Laser diode emits visible radiation
Class: II
Wavelength: 660-680 nanometers
Average Power: .45 mW
Peak Power 2 mW
Frequency: 20 kHz 10% Duty Cycle